STD60NF55LT4 STMicroelectronics, STD60NF55LT4 Datasheet - Page 13

• Manufacturer Part Number: STD60NF55LT4
• Description: MOSFET N-CH 55V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD60NF55LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 5V
• Input Capacitance (ciss) @ Vds: 1950pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.014 Ohms
• Forward Transconductance Gfs (max / Min): 35 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 60 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD60NF55L - STD60NF55L-1
6
Revision history
Table 6.
18-May-2005
14-Mar-2005
18-Nov-2005
19-Jul-2006
Date
Revision history
Revision
3
4
5
6
Preliminary version
New package inserted: IPAK
Changed value in
New template, no content change
Table 4
(Rise Time from 18 to 180ns)
Changes
Revision history
13/14