IRF5305SPBF International Rectifier, IRF5305SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF5305SPBF
• Description: MOSFET P-CH 55V 31A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5305SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF5305SPBF

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