IRFB4019PBF International Rectifier, IRFB4019PBF Datasheet - Page 5

• Manufacturer Part Number: IRFB4019PBF
• Description: MOSFET N-CH 150V 17A TO-220AB
• Manufacturer: International Rectifier

Specifications of IRFB4019PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.9V @ 50µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 50V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.9V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 80 W
• Mounting Style: Through Hole
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 15. Maximum Avalanche Energy Vs. Temperature
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Fig 12. On-Resistance Vs. Gate Voltage
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
0
4
25
100
0.1
10
1
1.0E-06
Starting T J , Junction Temperature (°C)
V GS , Gate-to-Source Voltage (V)
6
50
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
8
TOP
BOTTOM 1% Duty Cycle
I D = 10A
75
10
100
0.01
0.05
0.10
1.0E-05
Single Pulse
T J = 125°C
T J = 25°C
Fig 14. Typical Avalanche Current Vs.Pulsewidth
12
125
I D = 10A
14
150
16
175
1.0E-04
tav (sec)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neither
3. Equation below based on circuit and waveforms shown in
4. P
5. B
6. I
7. ∆T
Tjmax nor Iav (max) is exceeded
Purely a thermal phenomenon and failure occurs at a
Figures 17a, 17b.
avalanche pulse.
voltage increase during avalanche).
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
av =
av
thJC
D (ave)
V
jmax
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
= Allowable avalanche current.
=
= Rated breakdown voltage (1.3 factor accounts for
1.0E-03
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 14, 15).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
300
250
200
150
100
50
0
25
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
Starting T J , Junction Temperature (°C)
50
1.0E-02
= P
D (ave)
jmax
75
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
100
thJC
TOP
BOTTOM
125
1.0E-01
1.3A
2.3A
10A
150
I D
5
175