IRF3315SPBF International Rectifier, IRF3315SPBF Datasheet

IRF3315SPBF

Manufacturer Part Number

IRF3315SPBF

Description

MOSFET N-CH 150V 21A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF3315SPBF.pdf (11 pages)

2.IRF3315SPBF.pdf (4 pages)

3.IRF3315SPBF.pdf (10 pages)

Specifications of IRF3315SPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

82 mOhm @ 12A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

21A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

95nC @ 10V

Input Capacitance (ciss) @ Vds

1300pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

21 A

Gate Charge, Total

95 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

94 W

Resistance, Drain To Source On

0.082 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

49 ns

Time, Turn-on Delay

9.6 ns

Transconductance, Forward

17 S

Voltage, Breakdown, Drain To Source

150 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N Channel

Continuous Drain Current Id

21A

Drain Source Voltage Vds

150V

On Resistance Rds(on)

82mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Drain-source Breakdown Voltage

150 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

21 A

Mounting Style

SMD/SMT

Gate Charge Qg

63.3 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF3315SPBF

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Absolute Maximum Ratings

Thermal Resistance

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF3315L) is available for low-

profile applications.

dv/dt

STG

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Surface Mount (IRF3315S)

Low-profile through-hole (IRF3315L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

on-resistance per silicon area.

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Parameter

PRELIMINARY

@ 10V

This

Typ.

300 (1.6mm from case )

–––

HEXFET

D P ak

-55 to + 175

IRF3315S/L

Max.

0.63

± 20

350

3.8

9.4

2.5

Power MOSFET

DS(on)

T O -26 2

Max.

1.6

DSS

= 21A

PD - 9.1617A

= 0.082

= 150V

Units

W/°C

V/ns

°C/W

°C

11/7/97

Related parts for IRF3315SPBF

IRF3315SPBF Summary of contents

Page 1

... Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...

Page 2

IRF3315S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF3315SPBF International Rectifier, IRF3315SPBF Datasheet

IRF3315SPBF

Specifications of IRF3315SPBF

Related parts for IRF3315SPBF

IRF3315SPBF Summary of contents

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