IXTA3N60P IXYS, IXTA3N60P Datasheet
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Manufacturer Part Number
IXTA3N60P
Description
MOSFET N-CH 600V 3A D2-PAK
Specifications of IXTA3N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.9 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5.5V @ 50µA
Gate Charge (qg) @ Vgs
9.8nC @ 10V
Input Capacitance (ciss) @ Vds
411pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.9 Ohms
Forward Transconductance Gfs (max / Min)
3.4 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
3.0
Rds(on), Max, Tj=25°c, (?)
2.9
Ciss, Typ, (pf)
411
Qg, Typ, (nc)
9.8
Trr, Typ, (ns)
500
Pd, (w)
70
Rthjc, Max, (k/w)
1.8
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-220
TO-263
TO-252
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 50 µA
G
= 0.5 I
, V
= 30 Ω
DS
= 0
D25
, Note 1
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
± 30
± 40
0.35
300
600
600
100
150
260
3.0
10
70
± 100
6
3
5
4
3
Max.
5.5
2.9
50
5
V/ns
mJ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
Ω
g
g
g
TO-263 (IXTA)
TO-220 (IXTP)
Features
Advantages
TO-252 (IXTY)
l
l
l
l
l
l
V
I
R
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
D25
G = Gate
S = Source
DS(on)
DSS
G
D
S
G
G
= 600
=
S
≤ ≤ ≤ ≤ ≤
S
3.0
2.9
(TAB)
D = Drain
TAB = Drain
DS99449E(04/06)
(TAB)
(TAB)
A
V
Ω Ω Ω Ω Ω
Related parts for IXTA3N60P
IXTA3N60P Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXTA 3N60P IXTP 3N60P IXTY 3N60P Maximum Ratings 600 = 1 MΩ 600 GS ± 30 ± 100 ≤ DSS 70 -55 ... +150 150 -55 ... +150 300 260 4 3 0.35 Characteristic Values Min ...
... Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min ...
... D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 10V 2.8 GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved C 6 5.5 5 4.5 4 3.5 3 2.5 2 1 3.1 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 ...
... Fig. 9. Source Current vs. Source-To-Drain Voltage º 125 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 1000 100 1MHz Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 6 5.5 5 4.5 4 3.5 3 2.5 2 1 º 0.8 0.9 0 Fig. 13. Maxim um Transient Therm al 10 ...
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