IRF7425PBF International Rectifier, IRF7425PBF Datasheet - Page 2
![MOSFET P-CH 20V 15A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7425PBF
Manufacturer Part Number
IRF7425PBF
Description
MOSFET P-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7425PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 4.5V
Input Capacitance (ciss) @ Vds
7980pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
–15 A
Gate Charge, Total
87 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
50 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
230 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
44 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±12 V
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8.2 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 15 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
160 ns
Gate Charge Qg
87 nC
Minimum Operating Temperature
- 55 C
Rise Time
20 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7425
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
––– 0.010 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 7980 –––
––– 1480 –––
–––
–––
–––
–––
–––
-20
44
Surface mounted on 1 in square Cu board, t
–––
–––
–––
–––
–––
–––
––– -100
–––
230
160
980
–––
–––
120
160
–––
87
18
21
13
20
-1.2
–––
-1.2
–––
-1.0
100
130
–––
–––
–––
–––
–––
-25
-2.5
180
240
27
32
8.2
-60
13
V/°C
m
µA
nA
nC
nC
ns
pF
ns
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -15A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -16V, V
= -16V, V
= -12V
= 12V
= -10V
= -4.5V
= -10V
= -4.5V
= 0V
= -15V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -2.5A
= -2.5A, V
D
D
GS
GS
= -250µA
= -15A
= -15A
= -13A
= 0V
= 0V, T
D
10sec.
= -1mA
GS
J
= 70°C
G
= 0V
D
S