IRF7425PBF International Rectifier, IRF7425PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7425PBF
• Description: MOSFET P-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7425PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 7980pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: –15 A
• Gate Charge, Total: 87 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.082 Ohm
• Resistance, Thermal, Junction To Case: 50 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 230 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8.2 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 15 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 160 ns
• Gate Charge Qg: 87 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7425
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
––– 0.010 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 7980 –––
––– 1480 –––
–––
–––
–––
–––
–––
-20
44
Surface mounted on 1 in square Cu board, t
–––
–––
–––
–––
–––
–––
––– -100
–––
230
160
980
–––
–––
120
160
–––
87
18
21
13
20
-1.2
–––
-1.2
–––
-1.0
100
130
–––
–––
–––
–––
–––
-25
-2.5
180
240
27
32
8.2
-60
13
V/°C
m
µA
nA
nC
nC
ns
pF
ns
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -15A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -16V, V
= -16V, V
= -12V
= 12V
= -10V
= -4.5V
= -10V
= -4.5V
= 0V
= -15V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -2.5A
= -2.5A, V
D
D
GS
GS
= -250µA
= -15A
= -15A
= -13A
= 0V
= 0V, T
D
10sec.
= -1mA
GS
J
= 70°C
G
= 0V
D
S