IRF7425PBF International Rectifier, IRF7425PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7425PBF
• Description: MOSFET P-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7425PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 7980pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: –15 A
• Gate Charge, Total: 87 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.082 Ohm
• Resistance, Thermal, Junction To Case: 50 °C/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 230 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±12 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8.2 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 15 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 160 ns
• Gate Charge Qg: 87 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7425PbF
6
0.015
0.010
0.005
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
1.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
3.0
I D = -15A
4.0
5.0
0.010
0.009
0.008
0.007
0.006
0.005
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
10
V GS = -2.5V
.2µF
Drain Current
-I D , Drain Current (A)
50KΩ
-3mA
20
Current Sampling Resistors
.3µF
I
G
30
V GS = -4.5V
D.U.T.
I
D
www.irf.com
40
+
-
V
DS
50
60