STD7NM50N STMicroelectronics, STD7NM50N Datasheet - Page 3

• Manufacturer Part Number: STD7NM50N
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD7NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 50V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.78 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7975-2; STD7NM50N

STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
Table 3.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
Symbol
I
SD
DM
P
V
V
V
T
E
TOT
I
I
I
T
ISO
GS
DS
stg
T
D
D
AS
AS
≤ 5A, di/dt ≤ 400A/µs, V
j
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25°C, I
C
=25°C)
DD
Parameter
=80% V
Parameter
Parameter
D
C
=I
(BR)DSS
= 25°C
AS
GS
, V
=0)
DD
C
C
= 50V)
= 25°C
= 100°C
TO-220 / DPAK
TO-220 / DPAK
IPAK
IPAK
2.78
20
45
--
5
3
-55 to 150
Max value
Max value
Value
± 25
500
62.5
300
15
100
2
TO-220FP
TO-220FP
20
2500
Electrical ratings
5
3
6.25
20
(1)
(1)
(1)
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
mJ
W
°C
V
V
A
A
A
V
A
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