IRF1010ZPBF International Rectifier, IRF1010ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1010ZPBF
• Description: MOSFET N-CH 55V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 63 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010ZPBF

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1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1000
10
100
1
10
1
0.1
4.0
5.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
6.0
1
T J = 25°C
4.5V
7.0
20µs PULSE WIDTH
Tj = 25°C
V DS = 25V
20µs PULSE WIDTH
8.0
10
T J = 175°C
9.0
10.0
100
11.0
1000
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
100
10
80
60
40
20
0
0.1
0
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
20
1
4.5V
V DS = 10V
20µs PULSE WIDTH
T J = 175°C
40
20µs PULSE WIDTH
Tj = 175°C
T J = 25°C
10
60
3
80
100