IRF6614 International Rectifier, IRF6614 Datasheet - Page 8

• Manufacturer Part Number: IRF6614
• Description: MOSFET N-CH 40V DIRECTFET-ST
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12.7A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2560pF @ 20V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Dual Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.7 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 3.6 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 27 ns
• Lead Free Status / Rohs Status: No

DirectFET™ Outline Dimension, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
8
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MIN
4.75
3.70
2.75
0.35
0.58
0.58
0.75
0.53
0.26
0.88
2.18
0.59
0.03
0.08
METRIC
DIMENSIONS
MAX
3.95
0.45
0.62
0.62
0.79
0.57
0.30
0.98
0.70
0.08
0.17
4.85
2.85
2.28
0.187
0.146
0.108
0.014
0.023
0.023
0.030
0.021
0.010
0.035
0.086
0.023
0.001
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.024
0.024
0.031
0.022
0.012
0.039
0.090
0.028
0.003
0.007
MAX
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