IRL3303SPBF International Rectifier, IRL3303SPBF Datasheet - Page 4

• Manufacturer Part Number: IRL3303SPBF
• Description: MOSFET N-CH 30V 38A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3303SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 38 A
• Gate Charge, Total: 26 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.026 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 7.4 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 38 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3303SPBF

4
1000
100
1600
1400
1200
1000
10
800
600
400
200
1
0.0
0
1
T = 175°C
V
C
C
C
J
V
SD
iss
0.5
oss
rss
DS
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
1.0
T = 25°C
gs
J
gd
ds
+ C
+ C
10
gd
gd
1.5
f = 1MHz
, C
ds
SHORTED
2.0
V
GS
= 0V
2.5
100
A
A
1000
100
15
12
10
9
6
3
0
1
0
1
I
T
T
Single Pulse
D
C
J
= 20A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
10
G
, Drain-to-Source Voltage (V)
BY R
V
V
20
10
DS
DS
DS(on)
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE 13
www.irf.com
30
10µs
100µs
1ms
10ms
40
100
A
A