IRFR2307ZPBF International Rectifier, IRFR2307ZPBF Datasheet - Page 7

• Manufacturer Part Number: IRFR2307ZPBF
• Description: MOSFET N-CH 75V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR2307ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 42 A
• Gate Charge, Total: 50 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 12.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 44 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 16 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 29 ns
• Gate Charge Qg: 50 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR2307ZPBF

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1000
100
0.1
10
120
100
1
1.0E-06
80
60
40
20
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
vs. Temperature
0.01
0.05
0.10
TOP
BOTTOM 1% Duty Cycle
I D = 32A
75
1.0E-05
Fig 15. Typical Avalanche Current vs.Pulsewidth
100
Single Pulse
125
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
1.0E-03
P
) = Transient thermal resistance, see figure 11)
D (ave)
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
1.0E-02
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is