IXTU01N80 IXYS, IXTU01N80 Datasheet
IXTU01N80
Manufacturer Part Number
IXTU01N80
Description
MOSFET N-CH 800V 0.1A TO-251
Manufacturer
IXYS
Datasheet
1.IXTY01N80.pdf
(2 pages)
Specifications of IXTU01N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
4.5V @ 25µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
50 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.1 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
0.1
Rds(on), Max, Tj=25°c, (?)
50
Ciss, Typ, (pf)
60
Qg, Typ, (nc)
8
Trr, Typ, (ns)
1500
Pd, (w)
25
Rthjc, Max, (k/w)
3
Package Style
TO-251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTU01N80
Manufacturer:
IXYS
Quantity:
18 000
High Voltage MOSFET
N-Channel, Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
T
Weight
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
D
GS(th)
DSS
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6 mm (0.063 in) from case for 5 s
Test Conditions
V
V
V
V
V
Pulse test, t
V
J
J
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C; T
= 25°C, pulse width limited by max. T
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
GS
, I
D
D
DC
D
DSS
J
= 25 A
= 25 A
, V
300 ms, duty cycle d
= 25°C to 150°C
= I
DS
D25
= 0
GS
= 1 M
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
2 %
J
min.
800
IXTU 01N80
IXTY 01N80
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
01N100
800
800
±20
±30
100
400
150
300
0.8
25
max.
±50
200
4.5
10
50
mA
mA
°C
°C
°C
°C
nA
W
V
V
V
V
V
A
A
V
V
g
Features
Applications
V
I
R
TO-251 AA (IXTU)
TO-252 AA (IXTY)
G = Gate,
S = Source,
D25
International standard packages
JEDEC TO-251 AA, TO-252 AA
Low R
Rugged polysilicon gate cell structure
Fast switching times
Level shifting
Triggers
Solid state relays
Current regulators
G
DSS
DS(on)
D
S
DS (on)
G
S
= 800 V
= 100mA
=
HDMOS
D = Drain,
TAB = Drain
D (TAB)
50
TM
D (TAB)
process
98841A (6/02)
Related parts for IXTU01N80
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXTU01N80 Summary of contents
Page 1
... 0.8 • V DSS DS DSS DS(on D25 Pulse test, t 300 ms, duty cycle d © 2002 IXYS All rights reserved IXTU 01N80 IXTY 01N80 Maximum Ratings 01N100 800 = 1 M 800 GS ±20 ±30 100 400 J 25 -55 ... +150 150 -55 ... +150 300 0.8 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... GS Pulse test, t 300 s, duty cycle 0.75 A, -di/ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 140 60 8.0 2 ...