STB6NK60Z-1 STMicroelectronics, STB6NK60Z-1 Datasheet - Page 16

• Manufacturer Part Number: STB6NK60Z-1
• Description: MOSFET N-CH 600V 6A I2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB6NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5955-5

Revision history
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Revision history
Table 10.
23-May-2007
23-Aug-2005
22-Nov-2007
14-Jan-2004
04-Oct-2005
Date
Document revision history
Revision
4
5
6
7
8
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Initial electronic version
Inserted ecopack label
Modified header
Added
Figure 11: Capacitance variations
Figure 16: Maximum avalanche energy vs temperature
Changes
has been updated