IXTA98N075T IXYS, IXTA98N075T Datasheet - Page 2

• Manufacturer Part Number: IXTA98N075T
• Description: MOSFET N-CH 75V 98A TO-263
• Manufacturer: IXYS

Specifications of IXTA98N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 98A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 98 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 98
• Rds(on), Max, Tj=25°c, (?): 0.0100
• Ciss, Typ, (pf): 3100
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 200
• Rthjc, Max, (k/w): 0.75
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Details

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
Note 1.
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %;
location is 5 mm or less from the package body.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test ConditionsCharacteristic Values
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 49 A, -di/dt = 100 A/μs
= 40 V, V
= 5 Ω (External)
= 10 V; I
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
ADVANCE TECHNICAL INFORMATION
S
, V
GS
= 0 V, Note 1
D
DS
GS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
4,835,592
4,881,106
= 0.5 V
D25
, Note 1
DSS
DSS
DS(on)
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25 A
= 25 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
38
3100
Typ.
Typ.
0.50
520
125
64
20
42
42
27
68
18
15
50
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.65°C/W
280
1.5
98
IXTA98N075T IXTP98N075T
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
6,683,344
6,710,405 B2 6,759,692
6,710,463
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Pins: 1 - Gate
Pins: 1 - Gate
14.61
6,727,585
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
6,771,478 B2 7,071,537
Min.
3 - Source 4, TAB - Drain
3 - Source 4, TAB - Drain
Millimeter
0
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
7,005,734 B2
7,063,975 B2
2 - Drain
2 - Drain
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Min.
Inches
0
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029
7,157,338B2