STD11NM50N STMicroelectronics, STD11NM50N Datasheet - Page 4

• Manufacturer Part Number: STD11NM50N
• Description: MOSFET N-CH 500V 9A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD11NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 547pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohm
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 6 A, 9 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10567-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
C
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
oss eq.
oss
rss
iss
gs
gd
G
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
Doc ID 17156 Rev 3
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 400 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 400 V, I
Figure
Test conditions
Test conditions
GS
, I
18)
STD11NM50N, STF11NM50N, STP11NM50N
GS
D
D
D
= 250 µA
= 4.5 A
= 0
= 8.5 A,
GS
C
=125 °C
= 0
Min.
Min.
500
2
-
-
-
-
Typ.
Typ.
547
210
0.4
5.8
3.7
42
19
10
2
3
oss
when V
Max.
Max.
0.47
100
100
1
4
-
-
-
-
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω