IXTP8N50PM IXYS, IXTP8N50PM Datasheet - Page 2

• Manufacturer Part Number: IXTP8N50PM
• Description: MOSFET N-CH 500V 4A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP8N50PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.88 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 4.0
• Rds(on), Max, Tj=25°c, (?): 0.88
• Ciss, Typ, (pf): 1050
• Qg, Typ, (nc): 20
• Trr, Typ, (ns): 400
• Pd, (w): 41
• Rthjc, Max, (k/w): 3.0
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
d(on)
r
d(off)
f
rr
fs
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
F
F
DS
GS
GS
GS
GS
G
= I
= 3 A, V
PRELIMINARY TECHNICAL INFORMATION
= 10 V; I
= 18 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
GS
= 0 V,
D
DS
= 0 V, V
DS
= 4 A
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
R
DSS
DSS
= 100 V
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 4 A
= 8 A
(T
(T
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
5
Characteristic Values
Characteristic Values
1050
Typ.
Typ.
120
400
12
22
28
65
23
20
6,162,665
6,259,123 B1
6,306,728 B1
8
7
7
3.0 ° C/W
Max.
Max.
1.5
14
8
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
ISOLATED TO-220 (IXTP...M)
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
1 2
6,727,585
6,759,692
6,771,478 B2
3
2 - Drain (Collector)
3 - Source (Emitter)
IXTP 8N50PM