IRF6633TRPBF International Rectifier, IRF6633TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF6633TRPBF
• Description: MOSFET N-CH 20V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6633TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1250pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MP
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.4 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 89 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6633TRPBFTR

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000.0
100.0
10.0
60
50
40
30
20
10
1.0
0.1
0
25
0.2
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
50
0.4
T C , Case Temperature (°C)
75
0.6
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
0.8
V GS = 0V
125
1.0
200
160
120
80
40
0
25
150
1.2
Starting T J , Junction Temperature (°C)
50
75
Fig 13. Typical Threshold Voltage vs. Junction
100
2.5
2.0
1.5
1.0
1000
100
0.1
10
TOP
BOTTOM
-75
1
0.1
T A = 25°C
Tj = 150°C
Single Pulse
-50
125
Fig11. Maximum Safe Operating Area
8.7A
T J , Junction Temperature ( °C )
5.7A
13A
V DS , Drain-toSource Voltage (V)
I D
-25
150
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
0
1.0
25
IRF6633PbF
50
I D = 250µA
10.0
75
100 125
100µsec
10msec
1msec
100.0
150
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