IXTP56N15T IXYS, IXTP56N15T Datasheet

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IXTP56N15T

Manufacturer Part Number
IXTP56N15T
Description
MOSFET N-CH 150V 56A TO-220
Manufacturer
IXYS
Series
TrenchHV™r
Datasheet

Specifications of IXTP56N15T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
56
Rds(on), Max, Tj=25°c, (?)
0.036
Ciss, Typ, (pf)
2250
Qg, Typ, (nc)
34
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
300
Rthjc, Max, (k/w)
0.50
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
DM
D25
AR
GSS
DSS
L
J
JM
stg
SOLD
GS(th)
DSS
DGR
GSM
AS
D
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
GS
GS
J
J
J
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
TM
GS
, di/dt ≤ 100 A/μs, V
DSS
, I
D
D
D
= 250 μA
= 250 μA
= 28 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
JM
IXTA56N15T
IXTP56N15T
150
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
± 30
150
150
140
500
300
175
300
260
2.5
56
± 100
5
3
3
200
Max.
4.5
36
5
V/ns
m Ω
mJ
°C
°C
°C
nA
μA
°C
°C
μA
W
V
V
V
A
A
A
g
g
V
V
TO-263 (IXTA)
Features
Advantages
TO-220 (IXTP)
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
V
I
R
D25
G = Gate
S = Source
DSS
DS(on)
G
G
D S
S
= 150
=
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
56
36 mΩ Ω Ω Ω Ω
(TAB)
(TAB)
DS99800 (03/07)
A
V

Related parts for IXTP56N15T

IXTP56N15T Summary of contents

Page 1

... GSS DSS DS DSS Notes 1, 2 DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA56N15T IXTP56N15T Maximum Ratings 150 = 1 MΩ 150 GS ± 140 JM 5 500 ≤ DSS 300 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min ...

Page 2

... Typ. Max. 160 JM 1.1 100 Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA56N15T IXTP56N15T TO-263 (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter Inches nC Min. Max. Min ...

Page 3

... Value 175º 25º 100 110 120 130 -50 IXTA56N15T IXTP56N15T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 28A Value DS(on) D vs. Junction Temperature V = 10V 56A D - 100 125 T - Degrees Centigrade J Fig ...

Page 4

... T = 25º 1.1 1.2 1.3 0 1.00 C iss 0.10 C oss C rss 0. 0.00001 IXTA56N15T IXTP56N15T Fig. 8. Transconductance 40ºC J 25ºC 150º Amperes D Fig. 10. Gate Charge V = 75V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds ...

Page 5

... 105 115 125 14 Switching Times vs. Junction Temperature d(off 15V 75V IXTA56N15T IXTP56N15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 5Ω 15V 75V 125º Amperes D Fig. 16. Resistive Turn-off - - - - d(off 5Ω 15V 75V 28A 56A 105 115 T - Degrees Centigrade J Fig ...

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