IRF6713STRPBF International Rectifier, IRF6713STRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF6713STRPBF
• Description: MOSFET N-CH 25V 22A DIRECTFET-SQ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6713STRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2880pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 95 A
• Power Dissipation: 42 W
• Gate Charge Qg: 21 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DirectFET™ Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
8
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
MIN
N/A
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
0.93
2.00
0.616
0.020
0.08
METRIC
DIMENSIONS
MAX
3.95
0.45
0.52
0.82
0.92
0.82
N/A
0.97
0.676
0.080
0.17
4.85
2.85
2.10
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
N/A
0.037
0.079
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
N/A
0.038
0.083
0.0274
0.0031
0.007
MAX
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