IRFIB41N15DPBF International Rectifier, IRFIB41N15DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFIB41N15DPBF
• Description: MOSFET N-CH 150V 41A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFIB41N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2520pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIB41N15DPBF

100000
10000
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
1000
100
4
10
1000
100
0.1
10
1
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
Drain-to-Source Voltage
T = 175 C
V DS , Drain-to-Source Voltage (V)
J
V
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
10
= C gs + C gd , C ds
= C gd
T = 25 C
J
Ciss
Coss
Crss
f = 1 MHZ
1.0
°
100
1.4
SHORTED
V
GS
= 0 V
1000
1.8
1000
100
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
25A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
20
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
40
10
V
V
V
BY R
DS
DS
DS
= 120V
= 75V
= 30V
60
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
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100
80
10us
100us
1ms
10ms
100
13
1000
120