IRFS4620PBF International Rectifier, IRFS4620PBF Datasheet

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IRFS4620PBF

Manufacturer Part Number
IRFS4620PBF
Description
MOSFET N-CH 200V 24A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS4620PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 50V
Power - Max
144W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
24 A
Power Dissipation
144 W
Mounting Style
SMD/SMT
Gate Charge Qg
25 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
E
I
E
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Parameter
Parameter
e
GS
GS
@ 10V
@ 10V
d
i
G
Gate
G
IRFSL4620PbF
D
S
D
IRFS4620PbF
See Fig. 14, 15, 22a, 22b,
Typ.
IRFS4620PbF
–––
–––
D
V
R
I
2
D
Pak
DSS
DS(on)
G
-55 to + 175
S
Max.
0.96
100
144
± 20
300
113
HEXFET Power MOSFET
Drain
24
17
54
D
typ.
IRFSL4620PbF
max.
D
1.045
Max.
TO-262
40
G
D
63.7m
77.5m
S
200V
Source
24A
S
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
96203
12/18/08
1

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IRFS4620PBF Summary of contents

Page 1

... IRFS4620PbF IRFSL4620PbF HEXFET Power MOSFET D V DSS R typ. DS(on) max Pak TO-262 IRFS4620PbF IRFSL4620PbF G D Gate Drain Max 100 144 0.96 ± - 175 300 113 See Fig. 14, 15, 22a, 22b, Typ. Max. ––– 1.045 ––– 40 96203 200V 63 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175° 25°C 10 1.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 ...

Page 5

D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 ...

Page 6

100µA 3 250uA ID = 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 Temperature ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...

Page 8

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Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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