IRF6725MTRPBF International Rectifier, IRF6725MTRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF6725MTRPBF
• Description: MOSFET N-CH 30V 28A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6725MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 100 W
• Gate Charge Qg: 36 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Re-Applied
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Reverse
Recovery
Current
S
S
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
for HEXFET
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D = DRAIN
S = SOURCE
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
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D
Body Diode Forward
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Diode Recovery
Current
Power MOSFETs
dv/dt
Forward Drop
di/dt
IRF6725MPbF
D =
Period
P.W.
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V
I
SD
GS
DD
=10V
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