IRFS5615PBF International Rectifier, IRFS5615PBF Datasheet - Page 6
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IRFS5615PBF
Manufacturer Part Number
IRFS5615PBF
Description
MOSFET N-CH 150V 33A D2PAK
Manufacturer
International Rectifier
Datasheet
1.IRFSL5615PBF.pdf
(9 pages)
Specifications of IRFS5615PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 50V
Power - Max
144W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
33 A
Power Dissipation
144 W
Mounting Style
SMD/SMT
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 17a. Unclamped Inductive Test Circuit
Fig 18a. Switching Time Test Circuit
Fig 19a. Gate Charge Test Circuit
6
+
-
12V
V
GS
R G
20V
Same Type as D.U.T.
V DS
D.U.T
Current Regulator
.2µF
≤ 0.1 %
≤ 1
t p
50KΩ
3mA
Current Sampling Resistors
I AS
Fig 16.
D.U.T
.3µF
+
-
•
•
•
•
0.01 Ω
L
I
SD
G
•
•
•
D.U.T.
I
D
15V
-
G
+
-
V
HEXFET
DRIVER
DS
+
-
+
V DD
+
-
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
10%
V
Fig 17b. Unclamped Inductive Waveforms
DS
GS
Fig 18b. Switching Time Waveforms
P.W.
SD
DS
I
Fig 19b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
Period
d(on)
Body Diode Forward
Diode Recovery
Current
Qgd
t
dv/dt
Forward Drop
r
t p
di/dt
Qgodr
D =
Period
P.W.
V
(BR)DSS
t
V
V
I
d(off)
SD
GS
DD
Vgs
=10V
Id
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f