STB9NK60ZDT4 STMicroelectronics, STB9NK60ZDT4 Datasheet

MOSFET N-CH 600V 7A D2PAK

STB9NK60ZDT4

Manufacturer Part Number
STB9NK60ZDT4
Description
MOSFET N-CH 600V 7A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB9NK60ZDT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.95 Ohms
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4325-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB9NK60ZDT4
Manufacturer:
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Quantity:
25 000
Part Number:
STB9NK60ZDT4
Manufacturer:
STMicroelectronics
Quantity:
1 957
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB9NK60ZDT4
Manufacturer:
ST
Quantity:
20 000
Features
Application
Description
The SuperFREDMesh™ series associates all
advantages of reduced on-resistance, zener gate
protection and very high dv/dt capability with a
Fast body-drain recovery diode. Such series
complements the “FDmesh™” advanced
technology.
Table 1.
April 2008
STB9NK60ZD
STP9NK60ZD
STF9NK60ZD
Very high dv/dt capability
100% avalanche tested
Gate charge minimized
Low intrinsic capacitances
Fast internal recovery diode
Switching applications
Type
STB9NK60ZD
STP9NK60ZD
STF9NK60ZD
Order codes
N-channel 600 V - 0.85 Ω - 7 A - D
Device summary
600 V
600 V
600 V
V
DSS
< 0.95 Ω
< 0.95 Ω
< 0.95 Ω
R
DS(on)
max
B9NK60ZD
F9NK60ZD
P9NK60ZD
Marking
7 A
7 A
7 A
I
D
125 W
125 W
30 W
STF9NK60ZD - STP9NK60ZD
Pw
SuperFREDMesh™ Power MOSFET
Rev 8
Figure 1.
TO-220
TO-220FP
Package
TO-220
D²PAK
2
PAK, TO-220FP, TO-220
Internal schematic diagram
1
2
3
STB9NK60ZD
D²PAK
1
3
Tape and reel
Packaging
Tube
Tube
TO-220FP
www.st.com
1
2
3
1/16
16

Related parts for STB9NK60ZDT4

STB9NK60ZDT4 Summary of contents

Page 1

N-channel 600 V - 0.85 Ω Features R DS(on) Type V DSS max < 0.95 Ω STB9NK60ZD 600 V < 0.95 Ω STF9NK60ZD 600 V < 0.95 Ω STP9NK60ZD 600 V ■ Very high dv/dt ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuos Drain current (continuos (2) I ...

Page 4

Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold ...

Page 5

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f t Off-voltage rise time r(Voff) t Fall time f t Cross-over time c ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Output characteristics 6/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 3. Thermal impedance for TO-220 / D²PAK ...

Page 7

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 8. Normalized B VDSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature vs temperature Figure 9. Figure 13. Normalized on resistance vs Electrical ...

Page 8

Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 15. Maximum avalanche energy vs temperature ...

Page 9

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 ...

Page 12

Package mechanical data Dim Dia 12/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD TO-220FP mechanical data mm. Min. Typ Max. 4.40 4.60 2.5 2.7 2.5 2.75 ...

Page 13

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 ...

Page 14

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 15

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 6 Revision history Table 10. Document revision history Date 29-Sep-2003 13-Jun-2006 14-Apr-2008 Revision 6 Data updated 7 The document has been reformatted – Table 8 has been corrected 9 – Package mechanical data Revision history ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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