IXTP140N055T2 IXYS, IXTP140N055T2 Datasheet - Page 2

• Manufacturer Part Number: IXTP140N055T2
• Description: MOSFET N-CH 55V 140A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTP140N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4760pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 140
• Rds(on), Max, Tj=25°c, (?): 0.0054
• Ciss, Typ, (pf): 4760
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 40
• Pd, (w): 250
• Rthjc, Max, (k/w): 0.60
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
Repetitive, Pulse width limited by T
V
Resistive Switching Times
V
R
V
V
I
I
-di/dt = 100A/μs
V
Test Conditions
TO-220
Test Conditions
F
F
DS
GS
GS
GS
R
GS
G
= 70A, V
= 70A, V
= 27V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 5Ω (External)
= 0V, V
= 10V, V
= 0V
= 10V, V
GS
GS
DS
D
DS
DS
= 0V
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 0.5 • I
= 0.5 • I
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
40
Min.
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4760
Typ.
Typ.
0.50
715
2.5
40
70
50
13
92
21
17
82
22
22
35
Max.
Max.
0.60 °C/W
140
560
1.3
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
IXTA140N055T2
IXTP140N055T2
7,005,734 B2
7,063,975 B2
2 - Drain
4 - Drain
7,157,338B2