STB22NS25ZT4 STMicroelectronics, STB22NS25ZT4 Datasheet - Page 8

• Manufacturer Part Number: STB22NS25ZT4
• Description: MOSFET N-CH 250V 22A D2PAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STB22NS25ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.15 Ohms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Test circuits
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Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
Figure 17. Switching time waveform
circuit
STB22NS25Z - STP22NS25Z