IRFU5410PBF International Rectifier, IRFU5410PBF Datasheet - Page 7
![MOSFET P-CH 100V 13A I-PAK](/photos/5/49/54916/21-i-pak_sml.jpg)
IRFU5410PBF
Manufacturer Part Number
IRFU5410PBF
Description
MOSFET P-CH 100V 13A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFU5410PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
205 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
66W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Channel Type
P
Current, Drain
-13 A
Gate Charge, Total
58 nC
Package Type
I-Pak (TO-251AA)
Polarization
P-Channel
Power Dissipation
66 W
Resistance, Drain To Source On
0.205 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
3.2 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 13 A
Mounting Style
SMD/SMT
Gate Charge Qg
38.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFU5410PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU5410PBF
Manufacturer:
International Rectifier
Quantity:
1 818
Company:
Part Number:
IRFU5410PBF
Manufacturer:
MICROCHIP
Quantity:
10 243
Part Number:
IRFU5410PBF
Manufacturer:
IR
Quantity:
20 000
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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
7