IRFU18N15DPBF International Rectifier, IRFU18N15DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFU18N15DPBF
• Description: MOSFET N-CH 150V 18A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU18N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU18N15DPBF

4
10000
1000
100
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
T = 175 C
Drain-to-Source Voltage
J
V DS , Drain-to-Source Voltage (V)
V
SD
Forward Voltage
0.5
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Coss
Ciss
Crss
0.8
T = 25 C
f = 1 MHZ
J
100
°
1.1
SHORTED
V
GS
= 0 V
1000
1.4
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
10
BY R
20
DS(on)
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 120V
= 75V
= 30V
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100
30
10us
100us
1ms
10ms
13
1000
40