IRFU5305PBF International Rectifier, IRFU5305PBF Datasheet

IRFU5305PBF

Manufacturer Part Number

IRFU5305PBF

Description

MOSFET P-CH 55V 31A I-PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRFR5305PBF.pdf (11 pages)

2.IRFU5305PBF.pdf (3 pages)

Specifications of IRFU5305PBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

65 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

31A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Input Capacitance (ciss) @ Vds

1200pF @ 25V

Power - Max

110W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak, VPak (3 straight leads + tab)

Channel Type

Current, Drain

-31 A

Gate Charge, Total

63 nC

Package Type

I-Pak (TO-251AA)

Polarization

P-Channel

Power Dissipation

110 W

Resistance, Drain To Source On

0.065 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

39 ns

Time, Turn-on Delay

14 ns

Transconductance, Forward

8 S

Voltage, Breakdown, Drain To Source

-55 V

Voltage, Drain To Source

–55 V

Voltage, Forward, Diode

-1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 28 A

Mounting Style

SMD/SMT

Gate Charge Qg

42 nC

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.065Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFU5305PBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFU5305PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 3
Download datasheet (308Kb)

Description

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET

the designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

θJC

θJA

@ T

Surface Mount (IRFR5305)

Advanced Process Technology

Ultra Low On-Resistance

Straight Lead (IRFU5305)

Fast Switching

Fully Avalanche Rated

Lead-Free

= 100 C

= 25 C

Power MOSFETs are well known for, provides

Continuous Drain Current, V

Pulsed Drain Current †

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚†

Avalanche Current†

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ†

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient**

Parameter

@ -10V

Typ.

IRFR5305

300 (1.6mm from case )

–––

D-Pak

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

Max.

-110

0.71

± 20

-5.0

110

280

-31

-22

-16

IRFR5305PbF

IRFU5305PbF

DS(on)

IRFU5305

Power MOSFET

DSS

Max.

I-Pak

110

1.4

= -31A

= 0.065Ω

= -55V

PD-95025A

Units

W/ C

V/ns

C/W

°C

Related parts for IRFU5305PBF

IRFU5305PBF Summary of contents

Page 1

... G S D-Pak IRFR5305 Max. @ -10V GS @ -10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– ––– PD-95025A IRFR5305PbF IRFU5305PbF ® Power MOSFET V = -55V DSS R = 0.065Ω DS(on -31A D I-Pak IRFU5305 Units -31 -22 A ...

Page 2

IRFR/U5305PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse ...

Page 3

EXAMPLE : T HIS IS AN IRF U120 INT ERNATIONAL WIT H ASS EMB IFIE R LOT CODE 5678 LOGO AS SE MBLED ON WW 19, 1999 ASS EMBLY LINE "A" ASS EMBLY Note: ...

Related keywords

IRFU5305PBF datasheet
IRFU5305PBF data sheet
IRFU5305PBF pdf datasheet
IRFU5305PBF component
IRFU5305PBF part
IRFU5305PBF distributor
IRFU5305PBF RoHS
IRFU5305PBF datasheet download