STF3NK80Z STMicroelectronics, STF3NK80Z Datasheet - Page 3
![MOSFET N-CH 800V 2.5A TO220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STF3NK80Z
Manufacturer Part Number
STF3NK80Z
Description
MOSFET N-CH 800V 2.5A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STF3NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 1.25A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
4.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4342-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF3NK80Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STF3NK80Z
Manufacturer:
SGS
Quantity:
2 892
Part Number:
STF3NK80Z
Manufacturer:
ST
Quantity:
20 000
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
V
Symbol
Symbol
R
dv/dt
ESD(G-S)
V
I
R
P
thj-case
V
DM
V
V
T
SD
DGR
T
I
I
TOT
thj-a
T
ISO
DS
GS
stg
D
D
J
l
(2)
≤ 2.5 A, di/dt ≤ 200 A/µs, V
(3)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Parameter
Parameter
DD
C
GS
≤ V
Doc ID 9565 Rev 6
= 25 °C
GS
(BR)DSS
= 20 kΩ)
= 0)
C
C
, T
=100 °C
= 25 °C
j
≤ T
JMAX.
TO-220, DPAK
TO-220
1.78
IPAK
1.57
0.56
2.5
10
70
62.5
-55 to 150
TO-220FP
Value
Value
2000
± 30
300
800
800
4.5
5
TO-220FP
Electrical ratings
1.57
2.5
10
2500
0.2
25
(1)
DPAK
(1)
IPAK
(1)
1.78
100
W/°C
°C/W
°C/W
Unit
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
V
V
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