STU6N62K3 STMicroelectronics, STU6N62K3 Datasheet - Page 7

• Manufacturer Part Number: STU6N62K3
• Description: MOSFET N-CH 620V 5.5A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STU6N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.28 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 25.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 706pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.28 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD6N62K3 - STF6N62K3 - STP6N62K3 - STU6N62K3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
Normalized BV
vs temperature
DSS
vs temperature
Figure 9.
Figure 13. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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