IRF3205STRLPBF International Rectifier, IRF3205STRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF3205STRLPBF
• Description: MOSFET N-CH 55V 110A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF3205STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 146nC @ 10V
• Input Capacitance (ciss) @ Vds: 3247pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 110 A
• Gate Charge, Total: 146 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 110A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 97.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF3205STRLPBF; IRF3205STRLPBFTR

IRF3205S/LPbF
4
1000
6000
5000
4000
3000
2000
1000
100
0.1
10
1
0
0.2
1
T = 175 C
V
J
SD
V DS , Drain-to-Source Voltage (V)
0.8
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
T = 25 C
Ciss
Coss
Crss
J
= C gd
1.4
°
10
f = 1 MHZ
2.0
V
GS
= 0 V
2.6
100
10000
1000
100
10
16
14
12
10
1
8
6
4
2
0
1
0
T
T
Single Pulse
I =
D
C
J
= 25 C °
= 175 C
OPERATION IN THIS AREA LIMITED
62A
V
20
DS
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
40
BY R
60
DS(on)
V
V
V
10us
100us
1ms
10ms
DS
DS
DS
100
80
= 44V
= 27V
= 11V
www.irf.com
100
1000
120