IXTP12N50PM IXYS, IXTP12N50PM Datasheet - Page 2

• Manufacturer Part Number: IXTP12N50PM
• Description: MOSFET N-CH 500V 6A TO-220
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTP12N50PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1830pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 6.0
• Rds(on), Max, Tj=25°c, (?): 0.5
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 29
• Trr, Typ, (ns): 400
• Pd, (w): 50
• Rthjc, Max, (k/w): 2.5
• Package Style: TO-220 Overmolded
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
g(on)
gs
gd
RM
I
V
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
F
F
R
DS
GS
GS
GS
GS
G
= 6A, -di/dt = 150A/μs,
= I
= 100V, V
= 10V, I
= 10Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 6A, Note 1
DS
GS
= 25V, f = 1MHz
= 0.5
= 0.5 V
= 0V
4,835,592
4,881,106
V
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 6A
= 6A
5,049,961
5,063,307
5,187,117
(T
JM
(T
J
J
= 25°C, unless otherwise specified)
= 25°C unless otherwise specified)
5,237,481
5,381,025
5,486,715
7.5
Min.
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1830
18.2
2.8
182
Typ.
13
16
22
27
65
20
29
11
10
Typ.
300
2.5 °C/W
1.5
12
48
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOLATED TO-220 (IXTP...M)
6,727,585
6,771,478 B2 7,071,537
IXTP12N50PM
Terminals: 1 - Gate
1 2
7,005,734 B2
7,063,975 B2
3
2 - Drain (Collector)
3 - Source (Emitter)
7,157,338B2