IRLH5030TR2PBF International Rectifier, IRLH5030TR2PBF Datasheet - Page 4
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IRLH5030TR2PBF
Manufacturer Part Number
IRLH5030TR2PBF
Description
MOSFET N-CH 100V 13A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRLH5030TRPBF.pdf
(8 pages)
Specifications of IRLH5030TR2PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.5V @ 150µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
5185pF @ 50V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9.9 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
13 A
Power Dissipation
3.6 W
Gate Charge Qg
44 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.009Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLH5030TR2PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLH5030TR2PBF
Manufacturer:
SHARP
Quantity:
6 342
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
120
100
100
0.0001
80
60
40
20
0.1
10
0.001
0
1
0.01
Fig 9. Maximum Drain Current vs.
0.1
25
0.0
1E-006
1
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.2
V SD , Source-to-Drain Voltage (V)
D = 0.50
50
T C , Case Temperature (°C)
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.20
0.10
0.05
0.4
T J = 150°C
Limited By Package
75
0.6
1E-005
0.8
100
T J = 25°C
1.0
V GS = 0V
125
1.2
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.4
Fig 10. Threshold Voltage vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
10
0.001
Fig 8. Maximum Safe Operating Area
1
-75 -50 -25
1
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 150µA
I D = 500µA
I D = 1.0mA
I D = 1.0A
10msec
V DS , Drain-to-Source Voltage (V)
DC
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
10
1msec
0
0.01
25
100µsec
50
100
75 100 125 150
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0.1
1000