STD14NM50N STMicroelectronics, STD14NM50N Datasheet - Page 20

• Manufacturer Part Number: STD14NM50N
• Description: MOSFET N-CH 500V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10646-2

Packaging mechanical data
20/22
Figure 28. Tape for DPAK and D²PAK
Figure 29. Reel for DPAK and D²PAK
A
T
REEL DIMENSIONS
K0
D
Top cover
tape
Full radius
B0
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Doc ID 16832 Rev 4
User direction of feed
A0
B
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
P0
Access hole
At sl ot location
40mm min.
P1
Tape slot
in core for
tape start 25 mm min.
width
D
D1
C
P2
Bending radius
T
G measured at hub
F
N
E
AM08851v2
W
AM08852v2
R