STB9NK50ZT4 STMicroelectronics, STB9NK50ZT4 Datasheet - Page 6

• Manufacturer Part Number: STB9NK50ZT4
• Description: MOSFET N-CH 500V 7.2A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB9NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 910pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Forward Transconductance Gfs (max / Min): 5.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/13