STB9NK60ZT4 STMicroelectronics, STB9NK60ZT4 Datasheet - Page 5
![MOSFET N-CH 600V 7A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB9NK60ZT4
Manufacturer Part Number
STB9NK60ZT4
Description
MOSFET N-CH 600V 7A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB9NK60ZT4.pdf
(13 pages)
Specifications of STB9NK60ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.95 Ohms
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB9NK60ZT4
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STB9NK60ZT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB9NK60ZT4
Manufacturer:
ST
Quantity:
20 000
Transconductance
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Static Drain-source On Resistance
Capacitance Variations
Normalized On Resistance vs Temperature
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