IRF3205SPBF International Rectifier, IRF3205SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF3205SPBF
• Description: MOSFET N-CH 55V 110A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3205SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 146nC @ 10V
• Input Capacitance (ciss) @ Vds: 3247pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 110 A
• Gate Charge, Total: 146 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 65 ns
• Gate Charge Qg: 97.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 101 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3205SPBF

IRF3205S/LPbF
Source-Drain Ratings and Characteristics

ƒ
*
‚
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
t
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
E
SM
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
S
rr
on
DSS
GSS
For recommended footprint and soldering techniques refer to application note #AN-994.
d(on)
r
d(off)
f
SD
2
fs
D
S
rr
Repetitive rating; pulse width limited by
(BR)DSS
GS(th)
AS
I
DS(on)
iss
oss
rss
g
gs
gd
max. junction temperature. ( See fig. 11 )
R
T
SD
Starting T
(BR)DSS
J
G
≤ 175°C
≤ 62A di/d ≤ 207A/µs, V
= 25Ω, I
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Leakage Current
= 25°C, L = 138µH
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Internal Drain Inductance
Internal Source Inductance
= 62A. (See Figure 12)

Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
…
„
†
‡
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
junction temperature. Package limitation current is 75A.
operation outside rated limits.
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1050† 264‡ mJ
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
55
44
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.057 –––
3247 –––
143
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
101
781
211
69
4.5
14
50
65
7.5
110
104
215
–––
390
1.3
–––
–––
250
100
146
–––
–––
–––
–––
–––
–––
–––
8.0
4.0
25
35
54
V/°C
nC
mΩ
ns
nC
µA
nA
ns
nH
pF
A
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
D
D
AS
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 62A
= 62A
= 25°C, I
= 25°C, I
= 62A, L = 138µH
= 4.5Ω
= V
= 44V
= 25V
= 0V, I
= 10V, I
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
= 0V
GS
J
= 175°C.
, I
D
S
F
D
D
D
Conditions
= 250µA
= 62A
GS
GS
= 62A, V
Conditions
= 250µA
= 62A
= 62A„
„
= 0V
= 0V, T
D
GS
= 1mA
„
J
www.irf.com
= 0V
= 150°C
G
G
S
„
+L
D
S
D
)
S
D