IRF530NPBF International Rectifier, IRF530NPBF Datasheet
IRF530NPBF
Specifications of IRF530NPBF
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IRF530NPBF Summary of contents
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... R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. 0. 94962 IRF530NPbF ® HEXFET Power MOSFET 100V DSS R = 90mΩ DS(on 17A D S TO-220AB Max. Units 0.47 W/° ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 0.1 (THERMAL RESPONSE) ...
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D.U 20V V GS 0.01 Ω Charge 6 200 160 DRIVER 120 + ...
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D.U.T + - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...
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Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...