STB8NM60T4 STMicroelectronics, STB8NM60T4 Datasheet - Page 13

• Manufacturer Part Number: STB8NM60T4
• Description: MOSFET N-CH 650V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5386-2; STB8NM60T4

STP8NM60, STD5NM60, STB8NM60
DIM.
(L1)
A1
b2
b4
e1
L2
V1
c2
A
D
E
H
b
c
e
L
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
TO-251 (IPAK) mechanical data
16.10
2.28
0.80
mm.
10
typ
o
Package mechanical data
0068771_H
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
13/18