STP9NK65Z STMicroelectronics, STP9NK65Z Datasheet - Page 7
![MOSFET N-CH 650V 6.4A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP9NK65Z
Manufacturer Part Number
STP9NK65Z
Description
MOSFET N-CH 650V 6.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP9NK65Z.pdf
(15 pages)
Specifications of STP9NK65Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.2A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.4A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
1145pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP9NK65Z
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP9NK65Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP9NK65ZFP
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STP9NK65ZFP
Manufacturer:
ON
Quantity:
6 000
Part Number:
STP9NK65ZFP
Manufacturer:
ST
Quantity:
20 000
STP9NK65Z - STP9NK65ZFP
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
Transconductance
vs temperature
Figure 9.
Figure 13. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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