IRF6729MTRPBF International Rectifier, IRF6729MTRPBF Datasheet - Page 2

MOSFET N-CH 30V 31A DIRECTFET

IRF6729MTRPBF

Manufacturer Part Number
IRF6729MTRPBF
Description
MOSFET N-CH 30V 31A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6729MTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
2.35V @ 150µA
Gate Charge (qg) @ Vgs
63nC @ 4.5V
Input Capacitance (ciss) @ Vds
6030pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
Q
Q
Q
Q
G
iss
oss
rss
g
sw
oss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
6030
1360
12.1
18.9
–––
-4.2
–––
–––
–––
–––
–––
560
–––
–––
–––
4.0
1.4
2.2
1.8
4.9
1.3
42
11
14
29
22
37
20
15
30
40
2.35
-100
0.80
–––
–––
–––
100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
1.8
2.7
5.0
2.2
63
31
45
60
mV/°C
mV/°C
mΩ
mA
µA
nA
nC
nC
pF
nC
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
R
See Fig. 17
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 300A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
GS
DS
= 25A
= 25A
= 25°C, I
= 25°C, I
= 1.8Ω
= V
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 16V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 15V, V
= 0V
GS
GS
, I
, I
D
Conditions
Conditions
S
F
D
D
D
D
= 1.0mA
D
GS
GS
GS
GS
= 25A, V
= 25A
= 150µA
= 10mA
= 31A
= 25A
= 25A
= 0V
= 0V, T
= 0V
= 4.5V
i
D
i
i
www.irf.com
GS
= 10mA
J
= 125°C
i
= 0V
i

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