IXTA60N10T IXYS, IXTA60N10T Datasheet - Page 5
![MOSFET N-CH 100V 60A TO-263](/photos/5/59/55947/ixta60n10t_sml.jpg)
IXTA60N10T
Manufacturer Part Number
IXTA60N10T
Description
MOSFET N-CH 100V 60A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTP60N10T.pdf
(5 pages)
Specifications of IXTA60N10T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
176W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
60 A
Power Dissipation
176 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.0180
Ciss, Typ, (pf)
2650
Qg, Typ, (nc)
49
Trr, Typ, (ns)
59
Trr, Max, (ns)
-
Pd, (w)
176
Rthjc, Max, (k/w)
0.85
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2007 IXYS CORPORATION, All rights reserved
170
150
130
110
40
39
38
37
36
35
34
33
32
90
70
50
30
60
55
50
45
40
35
30
25
10
15
25
Fig. 17. Resistive Turn-off Switching Times
Fig. 15. Resistive Turn-on Switching Times
10A < I
T
V
t
J
DS
12
r
= 125ºC, V
35
20
I
= 50V
Fig. 13. Resistive Turn-on Rise Time
D
D
= 10A
14
< 30A
45
25
vs. Junction Temperature
t
d(on)
vs. Gate Resistance
GS
16
vs. Drain Current
55
= 10V
T
I
J
- - - -
30
D
I
R
T
- Degrees Centigrade
D
18
I
- Amperes
G
J
D
= 30A
65
= 125ºC
- Ohms
= 30A
35
20
75
t
R
V
22
f
G
DS
T
40
I
J
= 15Ω, V
D
85
= 50V
= 25ºC
= 10A
24
45
95
t
GS
d(off)
26
R
V
V
= 10V
GS
DS
G
105
= 15Ω
50
- - - -
= 10V
= 50V
28
115
55
30
80
70
60
50
40
30
20
10
67
63
59
55
51
47
43
39
35
125
120
110
100
39
38
37
36
35
34
33
90
80
70
60
50
40
30
60
55
50
45
40
35
30
25
25
15
10
Fig. 18. Resistive Turn-off Switching Times
Fig. 16. Resistive Turn-off Switching Times
t
R
V
t
T
V
R
V
V
f
G
DS
35
J
f
DS
GS
DS
G
= 15Ω, V
= 125ºC, V
20
12
= 15Ω
= 50V
= 50V
Fig. 14. Resistive Turn-on Rise Time
= 10V
= 50V
45
vs. Junction Temperature
14
25
t
T
d(off)
GS
J
vs. Gate Resistance
t
55
d(off)
GS
- Degrees Centigrade
= 10V
16
= 10V
- - - -
30
vs. Drain Current
R
- - - -
65
G
I
D
- Ohms
18
- Amperes
35
75
20
85
40
I
D
I
22
D
= 10A, 30A
T
T
I
95
= 10A
D
J
J
IXYS REF: T_60N10T(2V)8-07-08-A
= 25ºC
= 125ºC
= 30A
45
24
IXTA60N10T
IXTP60N10T
105
50
26
115
28
55
125
185
170
155
140
125
110
95
80
65
50
64
60
56
52
48
44
40
30