IRF7494PBF International Rectifier, IRF7494PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7494PBF
• Description: MOSFET N-CH 150V 5.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7494PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.0001
0.001
0.01
6
5
4
3
2
1
0
100
0.1
10
Fig 9. Maximum Drain Current vs.
25
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Ambient Temperature
T A , Ambient Temperature (°C)
50
1E-005
75
D = 0.50
0.02
0.05
0.10
0.01
0.20
100
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
0.1
t
r
≤ 0.1 %
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
≤ 1
IRF7494PbF
1
t
d(off)
10
t
f
+
-
100
5