STD10NM65N STMicroelectronics, STD10NM65N Datasheet - Page 15
STD10NM65N
Manufacturer Part Number
STD10NM65N
Description
MOSFET N-CH 650V 9A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STU10NM65N.pdf
(17 pages)
Specifications of STD10NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7957-2
STD10NM65N
STD10NM65N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD10NM65N
Manufacturer:
ST
Quantity:
101
Part Number:
STD10NM65N
Manufacturer:
ST
Quantity:
20 000
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
5
DIM.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
E
R
F
TAPE MECHANICAL DATA
Package mechanical data
All dimensions are in millimeters
MIN.
10.4
1.65
2.55
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
DPAK FOOTPRINT
mm
MAX.
10.6
12.1
1.85
2.75
16.3
1.6
7.6
4.1
8.1
2.1
7
0.267 0.275
0.409 0.417
0.059 0.063
0.059
0.065 0.073
0.291 0.299
0.100 0.108
0.153 0.161
0.075 0.082
1.574
0.311 0.319
0.618
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
0.476
0.641
DIM.
G
A
B
C
D
N
T
BASE QTY
REEL MECHANICAL DATA
2500
MIN.
12.8
20.2
16.4
1.5
50
mm
Package mechanical data
MAX.
13.2
18.4
22.4
330
BULK QTY
0.059
0.504 0.520
0.795
0.645 0.724
1.968
MIN.
2500
inch
12.992
MAX.
0.881
15/17