IRFS31N20DTRLP International Rectifier, IRFS31N20DTRLP Datasheet - Page 4

• Manufacturer Part Number: IRFS31N20DTRLP
• Description: MOSFET N-CH 200V 31A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS31N20DTRLP

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 3.1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 31A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 18A, 10V
• Current, Drain: 31 A
• Gate Charge, Total: 70 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.082 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 56 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 70 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
‡
Notes:
For recommended footprint and soldering techniques refer to application note #AN-994.
D
Dimensions are shown in millimeters (inches)
Repetitive rating; pulse width limited by
This is applied to D
I
R
max. junction temperature.
T
Starting T
SD
2
J
G
≤ 175°C
Pak Tape & Reel Infomation
≤ 18A, di/dt ≤ 110A/µs, V
= 25Ω, I
J
= 25°C, L = 3.8mH
AS
= 18A.
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
DD
TRR
TRL
≤ V
(BR)DSS
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
,
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
4.10 (.161)
3.90 (.153)
„
…
†
1.60 (.063)
1.50 (.059)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
This is only applied to TO-220AB package
as C
oss
Data and specifications subject to change without notice.
eff. is a fixed capacitance that gives the same charging time
oss
while V
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
IRFB/S/SL31N20DPbF
DS
is rising from 0 to 80% V
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
DSS
11