IXTA50N25T IXYS, IXTA50N25T Datasheet - Page 5

• Manufacturer Part Number: IXTA50N25T
• Description: MOSFET N-CH 250V 50A TO-263
• Manufacturer: IXYS

Specifications of IXTA50N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 78
• Trr, Typ, (ns): 166
• Trr, Max, (ns): -
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
10,000
1,000
100
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
3.6
0.4
0
f = 1 MHz
0.5
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
4.4
T
Fig. 11. Capacitance
J
Intrinsic Diode
= 125ºC
T
0.7
15
J
V
V
V
= 125ºC
SD
GS
DS
4.8
- 40ºC
25ºC
- Volts
- Volts
- Volts
0.8
20
5.2
0.9
25
C iss
C oss
C rss
T
J
5.6
= 25ºC
30
1
6
1.1
35
40
1.2
6.4
1.00
0.10
0.01
100
90
80
70
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
10
D
G
DS
10
= 25A
= 10mA
0.0001
Fig. 12. Maximum Transient Thermal
= 125V
20
20
Fig. 8. Transconductance
IXTP50N25T IXTQ50N25T
IXTA50N25T IXTH50N25T
30
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
30
- NanoCoulombs
I
D
40
Impedance
- Amperes
0.01
40
50
T
J
60
= - 40ºC
50
125ºC
0.1
25ºC
70
60
80
1
70
90
10
100
80