IRF1405STRLPBF International Rectifier, IRF1405STRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF1405STRLPBF
• Description: MOSFET N-CH 55V 131A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 131A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 5480pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 131 A
• Gate Charge, Total: 170 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 4.6 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 130 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 69 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 131A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 131 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 170 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1405STRLPBF; IRF1405STRLPBFTR

www.irf.com
0.001
160
120
0.01
80
40
0.1
0.00001
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
≤ 1
J
DM
x Z
1
0.1
thJC
P
2
t
d(off)
DM
+ T
C
t
1
t
f
t
2
+
-
5
1