IXTA60N20T IXYS, IXTA60N20T Datasheet - Page 4

• Manufacturer Part Number: IXTA60N20T
• Description: MOSFET N-CH 200V 60A TO-263
• Manufacturer: IXYS
• Series: Trench™r

Specifications of IXTA60N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 73nC @ 10V
• Input Capacitance (ciss) @ Vds: 4530pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.04
• Ciss, Typ, (pf): 4530
• Qg, Typ, (nc): 73
• Trr, Typ, (ns): 118
• Trr, Max, (ns): -
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.3
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
180
160
140
120
100
100
120
100
80
60
40
20
10
80
60
40
20
0
0
0.2
3.0
0
f
= 1 MHz
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.4
4.0
10
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
15
0.6
V
V
DS
SD
T
V
J
GS
- Volts
= 150ºC
- Volts
5.0
0.7
20
- Volts
T
J
= 150ºC
0.8
- 40ºC
5.5
25
25ºC
0.9
T
J
6.0
30
= 25ºC
C oss
C rss
C iss
1.0
6.5
35
1.1
7.0
1.2
40
1.00
0.10
0.01
120
100
80
60
40
20
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 30A
= 10mA
= 100V
10
20
0.0001
IXTA60N20T IXTP60N20T
20
40
Fig. 8. Transconductance
Fig. 10. Gate Charge
Pulse Width - Second
Q
0.001
G
30
- NanoCoulombs
60
I
D
- Amperes
40
80
0.01
50
IXTQ60N20T
100
T
J
150ºC
= - 40ºC
25ºC
IXYS REF: T_60N20T(5G)02-10-10
0.1
60
120
70
140
1